sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:AFGY100T65SPD
Data Manual:AFGY100T65SPD.PDF
Brand:ON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
The AFGY100T65SPD field terminated trench IGBT is AEC-Q101 compliant and has extremely low conduction and switching losses. These features enable high efficiency operation in a variety of applications with excellent transient reliability and low EMI.
ON Semiconductor AFGY100T65SPD IGBTs offer advantages such as excellent parallel operation performance and balanced current sharing. In addition, the AFGY100T65SPD IGBT offers tight parameter distribution, high input impedance and short circuit tolerance.
Specification
Product Type: IGBT Transistors
Technology: Si
Package / Case: TO-247-3LD
Mounting Style: Through Hole
Configuration: Single
Maximum collector-emitter voltage VCEO: 650 V
Collector-emitter saturation voltage: 1.6 V
Maximum gate/emitter voltage: - 20 V, + 20 V
Continuous collector current at 25 C: 120 A
Pd - power dissipation: 660 W
Min. operating temperature: - 55 C
Max. operating temperature: + 175 C
gFactory packing quantity: 30
Applications
HEV/EV traction inverters
Auxiliary DC/AC converters
Motor drives
Other driveline applications requiring high power switching
Model
Brand
Package
Quantity
Describe
ST
D2PAK
5000
Trench gate field-stop 650 V, 30 A low-loss M series IGBT in a D²PAK package
IXYS
TO-220-3
5000
650V, Auroral Transmission IGBT Transistor for 20-60kHz Switching, TO-220-3
IXYS
TO-247-3
5000
900V, 165A, High Speed IGBT Transistor for 20-50 kHz Switching, TO-247-3
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
NCV78902DE0R2G
The NCV78902DE0R2G is a two-phase boost LED driver specifically designed for automotive front lighting systems, supporting applications such as high beams, low beams, daytime running lights (DRL), turn signal lights, and fog lights. The NCV78902DE0R2G…NCP402045MNTWG
The NCP402045MNTWG is a driver that integrates a MOSFET in a single package, featuring both a high-side MOSFET and a low-side MOSFET. This component is optimized for high-current DC-DC step-down power supply conversion applications. The NCP402045MNTWG…NCP81567MNTXG
The NCP81567MNTXG is a dual-rail six-add two-phase buck solution optimized for Intel IMVP9.2 cpus. The multiphase guide rail control system is based on dual-edge pulse width modulation (PWM) technology and combines DCR current detection technology. Th…NCP81418MNTXG
The NCP81418MNTXG is a high-performance fuse designed for 12V hot-swappable applications in servers, data storage, and industrial systems. This device features a 0.65mΩ (extremely low) NMOS FET and an integrated hot-swappable controller, all housed i…NVBG050N170M1
The NVBG050N170M1 silicon carbide (SiC) MOSFET launched by onsemi is part of the 1700V M1 planar SiC MOSFET series, which is specifically optimized for fast-switching applications. This MOSFET features a maximum of 76mΩ (at a maximum RDS(ON) of 20V, …NCN26000XMNTXG
The NCN26000XMNTXG Ethernet chip is an Ethernet transceiver (PHY) that complies with IEEE 802.3cg standards and is designed for industrial multi-point Ethernet. The NCN26000XMNTXG offers all the physical layer characteristics required for transmitting…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: