sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:AFGHL50T65RQDN
Data Manual:AFGHL50T65RQDN.PDF
Brand:ON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
AFGHL50T65RQDN Using novel field stop IGBT technology, onsemi’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Features
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operation
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A
• 100% of the Parts Tested for ILM (Note 2)
• High Input Impedance
• Fast Switching
• Tightened Parameter Distribution
• This Device is Pb−Free and RoHS Compliant
Typical Applications
• Solar Inverter, UPS, Welder, Telecom, ESS, PFC
Model
Brand
Package
Quantity
Describe
ST
D2PAK
5000
Trench gate field-stop 650 V, 30 A low-loss M series IGBT in a D²PAK package
IXYS
TO-220-3
5000
650V, Auroral Transmission IGBT Transistor for 20-60kHz Switching, TO-220-3
IXYS
TO-247-3
5000
900V, 165A, High Speed IGBT Transistor for 20-50 kHz Switching, TO-247-3
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