sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:LMG3411R050RWHR
Data Manual:LMG3411R050RWHR.pdf
Brand:TI
Particular Year:23+
Package:32-VQFN
Delivery Date:New original
Stock: 2000pcs
LMG3411R050RWHR GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.
LMG3411R050RWHR provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to simplify design, maximize reliability and optimize the performance of any power supply.
Feature
Enables High Density Power Conversion Designs
Superior System Performance Over Cascodeor Stand-alone GaN FETs
Low Inductance 8mm x 8mm QFN Package forEase of Design, and Layout
Adjustable Drive Strength for SwitchingPerformance and EMI Control
Digital Fault Status Output Signal
Only +12 V Unregulated Supply Needed
Integrated Gate Driver
Zero Common Source Inductance
20 ns Propagation Delay for MHz Operation
Process-tuned Gate Bias Voltage for Reliability
25 to 100V/ns User Adjustable Slew Rate
Robust Protection
Requires No External Protection Components
Over-current Protection with <100ns Response
>150V/ns Slew Rate Immunity
Transient Overvoltage Immunity
Overtemperature Protection
UVLO Protection on All Supply Rails
Applications
High Density Industrial and Consumer PowerSupplies
Multi-level Converters
Solar Inverters
Industrial Motor Drives
Uninterruptable Power Supplies
High Voltage Battery Chargers
Model
Brand
Package
Quantity
Describe
ON
SOIC-8
3000
Self Protected High Side Driver with Temperature Shutdown and Current Limit
ST
SO-8
18000
High-side driver with MultiSense analog feedback for automotive applications
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Texas Instruments (TI), abbreviated as TI, is the worlds leading semiconductor company providing innovative digital signal processing (DSP) and analog device technologies for real-world signal processing. In addition to the semiconductor business, it …
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