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2ED2108S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Product Attributes

Driven Configuration Half-Bridge  

Channel Type Synchronous  

Number of Drivers 1  

Gate Type IGBT, N-Channel MOSFET  

Voltage - Supply 10V ~ 20V  

Logic Voltage - VIL, VIH 1.1V, 1.7V  

Current - Peak Output (Source, Sink) 290mA, 700mA  

Input Type Non-Inverting  

High Side Voltage - Max (Bootstrap) 650 V  

Rise / Fall Time (Typ) 100ns, 35ns  

Operating Temperature -40°C ~ 125°C (TA)  

Mounting Type Surface Mount  

Package / Case 8-SOIC (0.154", 3.90mm Width)  

Supplier Device Package PG-DSO-8-53

Product Features

Unique Infineon Thin-Film-Silicon On Insulator (SOI) -technology

Negative VS transient immunity of 100 V

Floating channel designed for bootstrap operation Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

Logic operational up to –11 V on VS Pin

Negative voltage tolerance on inputs of –5 V

Independent under voltage lockout for both channels

Schmitt trigger inputs with hysteresis

3.3 V, 5 V and 15 V input logic compatible

Maximum supply voltage of 25 V

Dual package options of DSO-8 and DSO-14

High and low voltage pins separated for maximum creepage and clearance

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