sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IXYX25N250CV1HV
Data Manual:IXYX25N250CV1HV.pdf
Brand:IXYS
Particular Year:23+
Package:TO-247-3
Delivery Date:New original
Stock: 1000pcs
The IXYX25N250CV1HV High Voltage 2500V XPT™ (Ultralight Pass Through) IGBT device uses proprietary Thin-Wafer XPT™ technology and advanced IGBT process design with low thermal resistance, low tail current, low energy loss and high-speed switching capability.
specification
IGBT type: -
Voltage-emitter breakdown (Max) : 2500 V
Current - Collector (Ic) (Max) : 95 A
Current-collector pulse (Icm) : 235 A
Vce(on) (Max.) for different Vge and Ic: 4V@15V, 25A
Power - Max: 937 W
Switching power: 8.3mJ (on), 7.3mJ (off)
Input type: Standard
Grid charge: 147 nC
Td (On/off) value at 25°C: 15ns/230ns
Test conditions: 1250V, 25A, 5 ohms, 15V
Reverse recovery time (trr) : 220 ns
Operating temperature: -55°C ~ 175°C (TJ)
Installation type: Through hole
Package/housing: TO-247-3
Supplier device package: PLUS247™-3
Basic product number: IXYX25
Model
Brand
Package
Quantity
Describe
ST
D2PAK
5000
Trench gate field-stop 650 V, 30 A low-loss M series IGBT in a D²PAK package
IXYS
TO-220-3
5000
650V, Auroral Transmission IGBT Transistor for 20-60kHz Switching, TO-220-3
IXYS
TO-247-3
5000
900V, 165A, High Speed IGBT Transistor for 20-50 kHz Switching, TO-247-3
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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IXTA26P20P is manufactured using Littelfuses patented Polar™ process, a P-channel enhanced power MOSFET in a TO-263 (DPak-3L) surface mount packageContact Number:86-755-83294757
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