sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NCP51820AMNTWG
Data Manual:NCP51820AMNTWG.PDF
Brand:ON
Particular Year:23+
Package:QFN-15
Delivery Date:New and Original
Stock: 2650pcs
The NCP51820AMNTWG high−speed, gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode), high electron mobility transistor (HEMT) and gate injection transistor (GIT), gallium nitrade (GaN) power switches in off−line, half−bridge power topologies.
Features
• 650 V, Integrated High−Side and Low−Side Gate Drivers
• Recommended for Soft Switching Applications
• UVLO Protections for VDD High and Low−Side Drivers
• Dual TTL Compatible Schmitt Trigger Inputs
• Split Output Allows Independent Turn−ON/Turn−OFF Adjustment
• Source Capability: 1 A; Sink Capability: 2 A
• Separated HO and LO Driver Output Stages
• 1 ns Rise and Fall Times Optimized for GaN Devices
• SW and PGND: Negative Voltage Transient up to 3.5 V
• 200 V/ns dV/dt Rating for all SW and PGND Referenced Circuitry
• Maximum Propagation Delay of Less Than 50 ns
• Matched Propagation Delays to Less Than 5 ns
• User Programmable Dead−Time Control
• Thermal Shutdown (TSD)
Typical Applications
• Driving GaN Power Transistors used in Soft Switching Full or Half−Bridge, LLC, Active Clamp Flyback or Forward, Totem Pole PFC and Synchronous Rectifier Topologies
• Industrial Inverters and Motor Drives
• AC to DC Converters
Model
Brand
Package
Quantity
Describe
TI
VQFN-54
2000
600V 50mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode
TI
VQFN-54
2000
600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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