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Trade Name:1EDN7146UXTSA1
Data Manual:1EDN7146UXTSA1.pdf
Brand:INFINEON
Particular Year:23+
Package:TSNP-7
Delivery Date:New original
Stock: 2000pcs
1EDN7146UXTSA1 is a single-channel gate-driver IC optimized for driving Infineon CoolGaN™ Schottky Gate HEMTs, as well as other GaN SG HEMTs and Si MOSFETs.
Features
Optimized for driving GaN SG HEMTs and Si MOSFETs
Fully diferential logic input circuitry to avoid false triggering in low-side or high-side operation
High common-mode input voltage range (CMR) up to ± 200 V for high side operation
High immunity to common-mode voltage transitions (100 V/ns) for robust operation during fast switching
Compatible with 3.3 V or 5 V input logic
Four driving strength variants to optimize switching speed without external gate resistors - up to 2 A source/sink current capability
Active bootstrap clamp to avoid bootstrap capacitor overcharging during dead-time
Active Miller clamp with 5 A sink capability to avoid induced turn-on
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Applications
Single channel:
Synchronous rectifier
Class-E resonant wireless power
Half-bridge:
DC-DC converter
BLDC/PMSM motor drive
Class-D audio amplifier
Class-D resonant wireless power
Model
Brand
Package
Quantity
Describe
ST
PowerSSO-16
30000
High-side driver with MultiSense analogue feedback for automotive applications
ST
TO-252-6
5000
Single-channel high-side driver with current sensing support for 24V automotive applications
INFINEON
PG-DSO-20
2000
Automotive-qualified single-channel high-voltage gate driver, optimised for IGBT technology
INFINEON
PG-DSO-8
2000
125 V high-side gate driver with single output in DSO-8 package for battery-powered applications
INFINEON
PG-DSO-8
3000
650 V, 0.7 A high-side and low-side gate drivers with integrated bootloader diodes
INFINEON
PG-DSO-8
2500
1200 V, 4 A single-channel gate driver with separate output and short circuit clamping
INFINEON
SOT23-6
3000
Single-channel high-side and low-side gate driver with high-CMR TDI inputs
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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