sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NCV57081CDR2G
Data Manual:NCV57081CDR2G.pdf
Brand:ON
Particular Year:23+
Package:8-SOIC
Delivery Date:New original
Stock: 2000pcs
NCV57081CDR2G is high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications.
Features
High Peak Output Current (+6.5 A/−6.5 A)
Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on
Short Propagation Delays with Accurate Matching
IGBT/MOSFET Gate Clamping during Short Circuit
IGBT/MOSFET Gate Active Pull Down
Tight UVLO Thresholds for Bias Flexibility
Wide Bias Voltage Range including Negative VEE2
3.3 V, 5 V, and 15 V Logic Input
Safety and Regulatory Approvals
870 VPK Working Insulation Voltage
High Transient Immunity
High Electromagnetic Immunity
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
Motor Control
Uninterruptible Power Supplies (UPS)
Automotive Applications
Industrial Power Supplies
Solar Inverters
HVAC
Model
Brand
Package
Quantity
Describe
TI
VSON-8
15000
3A, 120V Half Bridge Gate Driver with 8V UVLO and Negative Voltage Handling Capability
MPS
QFN-10
3000
30V, 0.3A high frequency transformer drivers for automotive applications, AEC-Q100 certified
MPS
QFN-10
3000
30V, 0.3A high frequency transformer drivers for automotive applications, AEC-Q100 certified
TI
VQFN-54
2000
600V 50mΩ GaN FET with integrated driver, protection, temperature reporting and ideal diode mode
TI
VQFN-54
2000
600V 50mΩ GaN FET with integrated driver, protection and zero-voltage detection
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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