sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:TOSHIBA
Particular Year:24+
Package:TO-247-4
Delivery Date:New and original
Stock: 3000pcs
The TW015Z120C is a 100A, 1200V third-generation silicon carbide MOSFET device designed for high-power industrial applications such as 400V and 800V AC input AC-DC power supplies, photovoltaic (PV) inverters, and bidirectional DC-DC converters for uninterruptible power supplies (UPS).
TW015Z120C (Parameters)
FET type: N channel
Technology: SiC
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous Drain (Id) : 100A (Tc)
Drive voltage (Max Rds On, min Rds On) : 18V
On-resistance (Max.) at different ids and Vgs: 21 milliohm @ 50A, 18V
Vgs(th) (Max.) : 5V@11.7mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 158 N@18 V
Vgs (Max.) : +25V, -10V
Input capacitance (Ciss) for different Vds (Max.) : 6000 PF-@800 V
FET function: -
Power dissipation (Max.) : 431W (Tc)
Operating temperature: 175°C
Installation type: Through hole
Supplier Device Package: TO-247-4L (X)
Package/housing: TO-247-4
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
ST
HiP247-3
3000
1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
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