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TW045Z120C - 40A, 1200V third generation silicon carbide MOSFET

FET type: N channel

Technology: SiC

Drain-source voltage (Vdss) : 1200 V

Current at 25°C - Continuous drain (Id) : 40A (Tc)

Drive voltage (Max Rds On, min Rds On) : 18V

On-resistance (Max.) at different ids and Vgs: 62 milliohm @ 20A, 18V

Vgs(th) (Max.) : 5V@6.7 mA for different ids

Gate charge (Qg) at different Vgs (Max.) : 57 NC-@18 V

Vgs (Max.) : +25V, -10V

Input capacitance (Ciss) at different Vds (Max.) : 1969 PF-@800 V

FET function: -

Power dissipation (Max.) : 182W (Tc)

Operating temperature: 175°C

Installation type: Through hole

Supplier Device Package: TO-247-4L (X)

Package/housing: TO-247-4

Overview

Toshiba 1200V third generation silicon carbide MOSFETs are designed for high-power industrial applications such as 400V and 800V AC input AC-DC power supplies, photovoltaic (PV) inverters, and bidirectional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs employ SiC technology, which greatly contributes to lower power consumption and higher power density. This technology enables higher voltages, faster switching and lower on-resistance. In addition to low input capacitance, common gate input charge, and drain-source on-resistance as low as 15 Mω, the design enhances reliability.

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