sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:TOSHIBA
Particular Year:24+
Package:TO-247-4
Delivery Date:New and original
Stock: 3000pcs
The TW107Z65C device is a 20A, 650V third-generation silicon carbide MOSFET designed for high-power industrial applications such as 400V and 800V AC input AC-DC power supplies, photovoltaic (PV) inverters, and bidirectional DC-DC converters for uninterruptible power supplies (UPS).
TW107Z65C (Parameters)
FET type: N channel
Technology: SiC
Drain-source voltage (Vdss) : 650 V
Current at 25°C - Continuous Drain (Id) : 20A (Tc)
Drive voltage (Max Rds On, min Rds On) : 18V
On-resistance (Max.) at different ids and Vgs: 152 milliohm @ 10A, 18V
Vgs(th) (Max.) : 5V@1.2mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 21 NC-@18 V
Vgs (Max.) : +25V, -10V
Input capacitance (Ciss) for different Vds (Max.) : 600 PF-@ 400 V
FET function: -
Power dissipation (Max) : 76W (Tc)
Operating temperature: 175°C
Installation type: Through hole
Supplier Device Package: TO-247-4L (X)
Package/housing: TO-247-4
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
650V, 25mohm, N-Channel - EliteSiC, Silicon Carbide (SiC) MOSFET Transistor
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
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TOSHIBA (Toshiba), Japans largest semiconductor manufacturer, the second largest integrated motor manufacturer, is affiliated to the Mitsui Group.Toshiba, formerly known as Tokyo Shibaura Electric Co., Ltd., was formed by the merger of Shibaura Manufa…
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