sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGW50N65F5FKSA1
Data Manual:IGW50N65F5FKSA1.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-3
Delivery Date:New original
Stock: 2000pcs
The IGW50N65F5FKSA1 discrete IGBT is optimized for switching >60kHz to provide optimal efficiency and bridge the gap between MOSFETs and IGBTs. The 650V TRENCHSTOP™ 5 F5 IGBT is designed with a silicon carbide diode for low inductance and offers 1% higher efficiency than the 650V TRENCHSTOP™ 5 H5 series.
Product Specifications:
Voltage-emitter breakdown (Max) : 650 V
Current - Collector (Ic) (Max) : 80 A
Current-collector pulse (Icm) : 150 A
Vce(on) (Max.) for different Vge and Ic: 2.1V@15V, 50A
Power - Max. : 305 W
Switching power: 490µJ (on), 160µJ (off)
Input type: Standard
Grid charge: 120 nC
Td (On/off) value at 25°C: 21ns/175ns
Test conditions: 400V, 25A, 12ohm, 15V
Operating temperature: -40°C ~ 175°C (TJ)
Installation type: Through hole
Package/housing: TO-247-3
Supplier device package: PG-TO247-3
Basic product number: IGW50N65
Model
Brand
Package
Quantity
Describe
IXYS
TO-220-3
5000
650V, Auroral Transmission IGBT Transistor for 20-60kHz Switching, TO-220-3
IXYS
TO-247-3
5000
900V, 165A, High Speed IGBT Transistor for 20-50 kHz Switching, TO-247-3
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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