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The TP65H100G4PS is a 650V GaN FET (gallium nitride field effect transistor) from Renesas that uses Gen IV SuperGaN platform technology with high reliability and low loss characteristics.

Main specifications

FET type: N-channel

Technology: GaNFET (Gallium nitride

Drain-source voltage (Vdss) : 650 V

Current at 25°C - continuous drain (Id) : 18.9A (Tc)

Drive voltage (maximum Rds On, minimum Rds On) : 10V

On-resistance (maximum value) at different ids and Vgs: 110 milliohms @ 12A, 10V

Vgs(th) (maximum value) at different ids: 4.1V @ 1.8mA

Gate charge (Qg) at different Vgs (maximum value) : 14.4 nC @ 10 V

Vgs (maximum value) : ±20V

Input capacitance (Ciss) at different Vds (maximum value) : 818 pF @ 400 V

FET function: -

Power dissipation (maximum) : 65.8W (Tc)

Operating temperature: -55°C to 150°C (TJ)

Installation type: Through hole

Encapsulation: TO-220-3

Technical advantage

The TP65H100G4PS adopts a composite structure of GaN HEMT and silicon MOSFET, combining high-voltage GaN materials with low-voltage silicon technology to enhance efficiency and reduce power consumption. This device is suitable for high-power scenarios, such as power management and industrial drives. ‌

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