sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GaN FET
Brand:Renesas
Particular Year:25+
Package:TO-247-3
Delivery Date:New and original
Stock: 2000pcs
The TP65H035G4WSQA 650V 35mΩ gallium nitride (GaN) FET is a normally closed device built using Renesas' GenIV platform. By using proprietary technology, the internal package inductance has been reduced and the assembly process has been simplified. It combines the most advanced high-voltage GaN HEMT with low-voltage silicon MOSFET to provide outstanding reliability and performance. In addition, TP65H035G4WSQA has passed the automotive-grade test at 175°C and the AEC-Q101 stress test for automotive-grade discrete semiconductors.
Technical specifications
FET type: N-channel
Technology: GaNFET (Gallium nitride
Drain-source voltage (Vdss) : 650 V
Current at 25°C - continuous drain (Id) : 47.2A (Tc)
Drive voltage (maximum Rds On, minimum Rds On) : 10V
On-resistance (maximum value) at different ids and Vgs: 41 milliohms @ 30A, 10V
Vgs(th) (maximum value) at different ids: 4.8V @ 1mA
Gate charge (Qg) at different Vgs (maximum value) : 22 nC @ 10 V
Vgs (maximum value) : ±20V
Input capacitance (Ciss) at different Vds (maximum value) : 1500 pF @ 400 V
FET function: -
Power dissipation (maximum) : 187W (Tc)
Operating temperature: -55°C to 175°C (TJ)
Grade: Automotive grade
Qualification: AEC-Q101
Installation type: Through hole
Encapsulation: TO-247-3
Typical applications
The TP65H035G4WSQA is suitable for scenarios such as automotive electronics, photovoltaic inverters, industrial power modules, and high-voltage DC converters.
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