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Shenzhen  Mingjiada Electronics Co., Ltd.

Service Telephone:86-755-83294757

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GAN039-650NTBZ

Product Description:Gallium nitride (GaN) FET Surface mount N-channel 650 V 58.5A (Tc) 250W (Tc) CCPAK1212i

Package:CCPAK1212i
10pcs
3000
1 +
10 +
25 +
50 +
>=100
GAN039-650NBBHP

Product Description:Gallium nitride (GaN) FET surface mount N-channel 650 V 60A (Tc) 300W (Tc) CCPAK1212

Package:CCPAK1212
10pcs
3000
1 +
10 +
25 +
50 +
>=100
GANB4R8-040CBAZ

Product Description:Gallium nitride (GaN) FET Surface Mount N Channel 40 V 20A (Ta) 13W (Ta) 22-WLCSP (2.1x2.1)

Package:WLCSP-22
10pcs
3000
1 +
10 +
25 +
50 +
>=100
GANE3R9-150QBAZ

Product Description:Gallium nitride (GaN) FET Surface mount N-channel 150 V 100A (Ta) 65W (Ta) VQFN

Package:VQFN-7
10pcs
3000
1 +
10 +
25 +
50 +
>=100
LMG3624REQR
TI

Product Description:650V 170mΩ GaN FET with integrated driver, protection and current sensing

Package:VQFN-38
10pcs
3000
1 +
10 +
25 +
50 +
>=100
LMG3426R030RQZR
TI

Product Description:600V 30mΩ GaN FET with integrated driver, protection and zero-voltage detection

Package:54-VQFN
10pcs
2000
1 +
10 +
25 +
50 +
>=100
LMG2100R044RARR
TI

Product Description:100V 4.4mΩ half-bridge GaN FET with integrated driver and protection

Package:WQFN-16
10pcs
2000
1 +
10 +
25 +
50 +
>=100
A5G26H605W19NR3
NXP

Product Description:2496-2690MHz, 85W Average, 48V Airfast® RF Power GaN Transistor

Package:OM−780−4S4S
10pcs
1000
1 +
10 +
25 +
50 +
>=100
A5G21H605W19NR3
NXP

Product Description:2110-2200MHz, 85W Average, 48V Airfast® RF Power GaN Transistor

Package:OM- 780- 4S4S
10pcs
1000
1 +
10 +
25 +
50 +
>=100
GAN063-650WSAQ

Product Description:Through hole N-channel 650 V 34.5A (Ta) 143W (Ta) TO-247-3

Package:TO-247-3
10pcs
1000
1 +
10 +
25 +
50 +
>=100
GAN041-650WSBQ

Product Description:Through hole N-channel 650 V 47.2A 187W TO-247-3

Package:TO-247-3
10pcs
1000
1 +
10 +
25 +
50 +
>=100
GAN140-650EBEZ

Product Description:650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

Package:DFN8080-8
10pcs
1000
1 +
10 +
25 +
50 +
>=100
GAN190-650FBEZ

Product Description:650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

Package:DFN5060-5
10pcs
1000
1 +
10 +
25 +
50 +
>=100
GAN140-650FBEZ

Product Description:650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

Package:DFN5060-5
10pcs
1000
1 +
10 +
25 +
50 +
>=100
GAN7R0-150LBEZ

Product Description:150 V, 7 mOhm Gallium Nitride (GaN) FET in 2.2 mm x 3.2 mm x 0.774 mm LGA Package

Package:FCLGA-3
10pcs
1000
1 +
10 +
25 +
50 +
>=100
GAN190-650EBEZ

Product Description:650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

Package:DFN8080-8
10pcs
1000
1 +
10 +
25 +
50 +
>=100
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Contact Number:86-755-83294757

Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585

Business Hours:9:00-18:00

E-mail:sales@hkmjd.com

Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong

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