sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GaN FET
Brand:Renesas
Particular Year:25+
Package:TO-247-4
Delivery Date:New and original
Stock: 2000pcs
The TP65H035G4YS is a SuperGaN FET device from Renesas, which comes in a TO-247-4L package with a 35mΩ on-resistance and a Kelvin source terminal design. The TP65H035G4YS device combines the most advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, offering outstanding reliability and performance.
TP65H035G4YS has the following main features:
The fourth-generation technology
GaN technology in compliance with JEDEC standards
Dynamic RDS (on) eff production testing
Robust design, definition
Wide gate safety margin
Transient overvoltage capability
A very low QRR
Reduce frequency division loss
Compliant with RoHS standards and halogen-free packaging
Achieve higher efficiency in both hard-switching and soft-switching circuits
Increase power density
Reduce the size and weight of the system
Reduce the overall system cost
It can be easily driven using common gate drivers
A Kelvin source for improving performance
Application scenarios
Data communication
Boda Industrial
Photovoltaic inverter
Servo motor
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Renesas Technology is one of the worlds top ten semiconductor chip suppliers, and has achieved the worlds highest market share in many fields such as mobile communications, automotive electronics, and PC/AV.Renesas Technology was formally established …
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