sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GaN FET
Brand:Renesas
Particular Year:25+
Package:TO-247-4
Delivery Date:New and original
Stock: 2000pcs
The TP65H035G4YS is a SuperGaN FET device from Renesas, which comes in a TO-247-4L package with a 35mΩ on-resistance and a Kelvin source terminal design. The TP65H035G4YS device combines the most advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, offering outstanding reliability and performance.
TP65H035G4YS has the following main features:
The fourth-generation technology
GaN technology in compliance with JEDEC standards
Dynamic RDS (on) eff production testing
Robust design, definition
Wide gate safety margin
Transient overvoltage capability
A very low QRR
Reduce frequency division loss
Compliant with RoHS standards and halogen-free packaging
Achieve higher efficiency in both hard-switching and soft-switching circuits
Increase power density
Reduce the size and weight of the system
Reduce the overall system cost
It can be easily driven using common gate drivers
A Kelvin source for improving performance
Application scenarios
Data communication
Boda Industrial
Photovoltaic inverter
Servo motor
Model
Brand
Package
Quantity
Describe
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Renesas Technology is one of the worlds top ten semiconductor chip suppliers, and has achieved the worlds highest market share in many fields such as mobile communications, automotive electronics, and PC/AV.Renesas Technology was formally established …
TP65H100G4LSGB
The TP65H100G4LSGB is a 650V SuperGaN GaN FET launched by Renesas. It adopts the Gen IV technology platform and combines high-voltage GaN HEMT with low-voltage silicon MOSFET, featuring excellent reliability and performance.Product attributesFET type:…TP65H100G4PS
The TP65H100G4PS is a 650V GaN FET (gallium nitride field effect transistor) from Renesas that uses Gen IV SuperGaN platform technology with high reliability and low loss characteristics.Main specificationsFET type: N-channelTechnology: GaNFET (Galliu…TP65H035G4WSQA
The TP65H035G4WSQA 650V 35mΩ gallium nitride (GaN) FET is a normally closed device built using Renesas GenIV platform. By using proprietary technology, the internal package inductance has been reduced and the assembly process has been simplified. It …TP65H070G4RS
The TP65H070G4RS is Renesas fourth-generation SuperGaN technology FET device in a TOLT package (top-cooling surface mount) for use in scenarios requiring efficient thermal management and high reliability. Its main specifications are as follows:FET typ…TP65H070G4PS
The TP65H070G4PS is a 650V, 70mΩ Gallium nitrided (GaN) field-effect transistor (FET) in TO-220 package manufactured by (Renesas). This device features low on-resistance and excellent switching performance, making it suitable for high-efficiency powe…TP65H070G4QS
The TP65H070G4QS is a 650V SuperGaN FET from Renesas in a TOLL (source pin) package, part of the 4th generation Gen IV SuperGaN platform. This device achieves high efficiency and reliability by combining high-voltage GaN HEMT with low-voltage silicon …Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: