sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IKQ140N120CH7XKSA1
Data Manual:IKQ140N120CH7XKSA1.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-3
Delivery Date:New original
Stock: 3000pcs
IKQ140N120CH7XKSA1 is a 1200 V, 140 A IGBT with anti-parallel diode in TO-247-3 package.
Summary of Features
Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, very soft and low Qrr
Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior
Offering Tj(max) of 175 °C
Benefits
Technology with the highest power density with up to 140 A rating
Optimized performance in application conditions
Lowest conduction losses
Lowest switching losses
Humidity robustness under harsh environment
Improved EMI performance
Highest power density with heat dissipation capability of TO-247PLUS vs TO-247
Applications
EV charging
Uninterruptible power supplies (UPS)
Model
Brand
Package
Quantity
Describe
IXYS
TO-220-3
5000
650V, Auroral Transmission IGBT Transistor for 20-60kHz Switching, TO-220-3
IXYS
TO-247-3
5000
900V, 165A, High Speed IGBT Transistor for 20-50 kHz Switching, TO-247-3
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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