sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IKQ75N120CS6XKSA1
Data Manual:IKQ75N120CS6XKSA1.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-3
Delivery Date:New original
Stock: 3000pcs
IKQ75N120CS6XKSA1 is a 1200 V, 75 A IGBT with anti-parallel diode in TO-247-3 package.
Summary of Features
High efficiency in hard switching and resonant topologies
Low saturation voltage if 1.85 V combined with low switching losses
Easy paralleling capability due to positive temperature coefficient in VCEsat
Low EMI
Low Gate Charge QG
Very soft, fast recovery anti-parallel diode
High ruggedness, temperature stable behaviour
Very tight parameter distribution
High power density and low thermal resistance of the TO-247PLUS package
Benefits
Lowest losses on IGBT, high system efficiency for higher power output
Fast and easy replacement of predecessor H3 technology
High device reliability and lifetime expectancy
Highest current of 75 A 1200 V IGBT with 75 A diode in TO-247 footprint
Lower thermal resistance Rth(jh) of the TO-247PLUS benefits to ~15% better heat dissipation and extended lifetime expectancy of IGBT
Applications
1-phase string inverter solutions
Uninterruptible power supplies (UPS)
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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