sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IKZA50N65SS5XKSA1
Data Manual:IKZA50N65SS5XKSA1.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-4
Delivery Date:New and Original
Stock: 1000pcs
IKZA50N65SS5XKSA1 CoolSiC™ Hybrid Discrete - TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ diode.
Features
VCE = 650 V
IC = 50 A
Ultra-low switching losses due to the combination of TRENCHSTOPTM 5 and CoolSiCTM technology as well as the Kelvin emitter pin
Benchmark efficiency in hard switching topologies
Plug-and-play replacement of pure silicon devices
Simplified PCB design due to the optimized pin-out of the four-pin package
Improved wave soldering quality due to the increased clearance of the Kelvin emitter and gate pins
Maximum junction temperature Tvjmax = 175°C
Potential applications
Industrial SMPS
Industrial UPS
Solar string inverter
Energy storage
Charger
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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