sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IKW75N60TFKSA1
Data Manual:IKW75N60TFKSA1.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
IKW75N60TFKSA1 IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti parallel Emitter Controlled HE diode.
Features
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Positive temperature coefficient in VCE(sat)
very tight parameter distribution
High ruggedness, temperature stable behaviour
Very high switching speed
Low EMI
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Applications
Frequency Converters
Uninterrupted Power Supply
Model
Brand
Package
Quantity
Describe
ST
D2PAK-3
5000
Insulated Gate Bipolar Transistors (IGBTs) 20 A - 600 V - short circuit rugged IGBTs
INFINEON
PG-TO220-3
5000
600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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