sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:25+
Package:TO247-3
Delivery Date:New and original
Stock: 1500pcs
The IPW65R025CM8 is a CoolMOS™ CM8 650V power MOSFET launched by Infineon. It is designed based on the Super Junction (SJ) principle and features low switching and conduction losses. This MOSFET features excellent commutation tolerance and is thus suitable for both hard-switching and soft-switching topologies.
Main specifications
FET type: N-channel
Technology: MOSFET (Metal Oxide)
Drain-source voltage (Vdss) : 650 V
Current at 25°C - continuous drain (Id) : 90A (Tc)
Drive voltage (maximum Rds On, minimum Rds On) : 10V
On-resistance (maximum value) at different ids and Vgs: 25 milliohms @ 40A, 10V
Vgs(th) (maximum value) at different ids: 4.7V @ 1.06mA
Gate charge (Qg) at different Vgs (maximum value) : 124 nC @ 10 V
Vgs (maximum value) : ±20V
Input capacitance (Ciss) at different Vds (maximum value) : 5910 pF @ 400 V
FET function: -
Power dissipation (maximum) : 431W (Tc)
Operating temperature: -55°C to 150°C (TJ)
Installation type: Through hole
Supplier device packaging: PG-TO247-3
Application scenarios
The IPW65R025CM8 is designed in compliance with RoHS standards and fully complies with JEDEC industrial application standards. Typical applications include LLC resonant converters, AI servers, telecommunication power supplies and data centers.
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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