sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:25+
Package:TDSON-8
Delivery Date:New and original
Stock: 2000pcs
The ISC033N03LF2S device is a 108A, StrongIRFET™ 2 30V power MOSFET with a best-in-class RDS(on) of 3.3 mOhm, available in a SuperSO8 5x6 package. This product is suitable for a wide range of applications from low to high switching frequencies.
The ISC033N03LF2S mainly has the following parameters:
FET type: N-channel
Technology: MOSFET (Metal Oxide)
Drain-source voltage (Vdss) : 30 V
Current at 25°C - continuous drain (Id) : 22A (Ta), 108A (Tc)
Drive voltage (maximum Rds On, minimum Rds On) : 4.5V, 10V
On-resistance (maximum value) at different ids and Vgs: 3.3 milliohms @ 30A, 10V
Vgs(th) (maximum value) at different ids: 2.35V @ 30µA
Gate charge (Qg) at different Vgs (maximum value) : 32 nC @ 10 V
Vgs (maximum value) : ±20V
Input capacitance (Ciss) at different Vds (maximum value) : 1400 pF @ 15 V
FET function: -
Power dissipation (maximum) : 3W (Ta), 71W (Tc)
Operating temperature: -55°C to 175°C (TJ)
Installation type: Surface mount type
Supplier device packaging: PG-TDSON-8
Compared with previous technologies, ISC033N03LF2S has achieved up to 40% improvement in RDS(on), while also featuring up to 60% enhancement in FOM and excellent robustness. Typical applications include:
UPS
Adapter
Motor driver
Battery management
Light electric vehicle
Power Management (SMPS
Battery-powered application
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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