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The Infineon IPG20N04S4L-11 is a dual N-channel logic level enhancement power MOSFET belonging to the OptiMOS™ T2 family in the PG-TDSON-8-4 package. The device features ultra-low on-resistance (R_DS(on) = 10.1mΩ) and high current-carrying capability (20A), making it suitable for applications such as automotive electronics, industrial control, and light-load switching.

IPG20N04S4L-11 Product Features

Dual N-channel MOSFET: Supports logic level enhancement mode to provide excellent on-state performance.

Low on-resistance: Maximum on-resistance of 11.6mΩ ensures efficient power transfer.

High current carrying capacity: Supports up to 20A continuous drain current.

Withstanding voltage value: Drain-source voltage (Vdss) is 40V, suitable for a wide range of power management applications.

Package Format: PG-TDSON-8-4 package with good thermal and electrical performance.

Environmental Compliance: RoHS compliant and supports lead-free processes.

Operating temperature range: -55°C to +175°C for harsh environments.

IPG20N04S4L-11 Key Parameters

On-resistance (RDS(on)): 11.6mΩ @ 10V, 17A

Power dissipation (Pd): 41W

Threshold Voltage (Vgs(th)): 2.2V

Gate Charge (Qg): 26nC @ 10V

Input Capacitance (Ciss): 1.99nF @ 25V

Reverse Transfer Capacitance (Crss): 30pF @ 25V

IPG20N04S4L-11 Potential Applications

Small load control switches

Automotive applications

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