sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Automotive MOSFET
Brand:ST
Particular Year:25+
Package:TO-247-3
Delivery Date:New and Original
Stock: 15000pcs
The STW58N60DM2AG is an N-channel power MOSFET from STMicroelectronics belonging to the MDmesh™ DM2 family in a TO-247-3 package for high-voltage, high-current switching applications such as power conversion, motor drives, industrial control and automotive electronics.
STW58N60DM2AG Features
Designed for automotive applications and certified to AEC-Q101
Fast recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt strength
Zener-protected
STW58N60DM2AG Product Attributes
Product Category: MOSFET
Technology: Si
Mounting Style. Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-Source Breakdown Voltage: 600 V
Id-Continuous Drain Current: 50 A
Rds On-Drain On-Resistance: 60 mOhms
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Vgs th- Gate-source threshold voltage: 4 V
Qg-Gate charge: 90 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Pd-Power dissipation: 360 W
Channel mode: Enhancement
Qualification: AEC-Q101
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TO252-3
15000
-30V, P-Ch, 4.5 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-P2
INFINEON
PG-TDSON-8
10000
40V, N-Ch, 2.8 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™-5
INFINEON
PG-TDSON-8
35000
40V, Dual N-Ch, 11.6 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™-T2
INFINEON
PG-TDSON-8
25000
40V, N-Ch, 1.5 mΩ max, Automotive MOSFET, SS08 (5x6), OptiMOS™-5
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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