sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Power MOSFET
Brand:IXYS
Particular Year:25+
Package:TO-247-3
Delivery Date:New and Original
Stock: 5000pcs
The IXFX230N20T is a high performance power MOSFET designed for high current and high voltage applications. The device features an N-channel structure with low on-resistance (RDS(on)) and high current handling capability, making it suitable for a wide range of power management and power conversion scenarios.
IXFX230N20T Product Attributes
Product Category: MOSFETs
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-source breakdown voltage: 200 V
Id-Continuous drain current: 230 A
Rds On-drain on-resistance: 7.5 mOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 3 V
Qg-gate charge: 358 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Pd-power dissipation: 1.67 kW
Channel mode: Enhancement
Trademark: HiPerFET
Configuration: Single
Transistor type: 1 N-Channel
Model
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IXYS is headquartered in Silicon Valley, USA. It was established in 1983. Main business: MOSFET, IGBT, Thyristor, SCR, rectifier bridge, diode, DCB block, power module, Hybrid, transistor, inverter, RF module and microcontrollers, etc.The business is…
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