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The IXFX230N20T is a high performance power MOSFET designed for high current and high voltage applications. The device features an N-channel structure with low on-resistance (RDS(on)) and high current handling capability, making it suitable for a wide range of power management and power conversion scenarios.

IXFX230N20T Product Attributes

Product Category: MOSFETs

Technology: Si

Mounting Style: Through Hole

Package / Case: TO-247-3

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds-Drain-source breakdown voltage: 200 V

Id-Continuous drain current: 230 A

Rds On-drain on-resistance: 7.5 mOhms

Vgs - gate-source voltage: - 20 V, + 20 V

Vgs th - gate-source threshold voltage: 3 V

Qg-gate charge: 358 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-power dissipation: 1.67 kW

Channel mode: Enhancement

Trademark: HiPerFET

Configuration: Single

Transistor type: 1 N-Channel

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