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【IPW60R018CFD7】600V, CoolMOS™ CFD7 SJ Power MOSFET Transistor, PG-TO247-3

IPW60R018CFD7 Specifications:

Series: CoolMOS™ CFD7

FET Type: N-channel

Technology: MOSFET (Metal Oxide Semiconductor)

Drain-Source Voltage (Vdss): 600 V

Continuous Drain Current at 25°C (Id): 101 A (Tc)

Drive Voltage (Maximum Rds On, Minimum Rds On): 10 V

On-Resistance at Different Id and Vgs (Maximum): 18 mΩ @ 58.2 A, 10 V

Vgs(th) at different Id (Max): 4.5V @ 2.91mA

Gate Charge (Qg) at different Vgs (Max): 251 nC @ 10 V

Vgs (Max): ±20V

Input Capacitance (Ciss) at different Vds (Max): 9901 pF @ 400 V

Power Dissipation (Max): 416W (Tc)

Operating Temperature: -55°C to 150°C (TJ)

Mounting Type: Through-Hole

Supplier Device Package: PG-TO247-3

Package/Case: TO-247-3

IPW60R018CFD7 Product Features:

CoolMOS™ 7 Series

Low gate charge

Low storage energy COSS

Low Qrr

High soft-switching efficiency

MOSFET suitable for hard resonant topologies

Related Information:

The 600 V CoolMOS™ CFD7 SJ MOSFET utilises Infineon's high-voltage super-junction MOSFET technology with an integrated fast body diode, representing the next generation of the CoolMOS™ 7 series. The CoolMOS™ CFD7 features reduced gate charge (Qg) and improved turn-off behaviour, achieving a 69% reduction in reverse recovery charge (Qrr) compared to competing products, alongside the market's lowest reverse recovery time (trr).

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