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Integrated Circuit Chip BSZ060NE2LSATMA1 8-PowerTDFN N-Channel MOSFET Transistor

Product Description

BSZ060NE2LSATMA1 is OptiMOS™ 25V MOSFETs transistors available in half-bridge configuration (power stage 5x6).

Specifications

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 25 V

Id - Continuous Drain Current: 40 A

Rds On - Drain-Source Resistance: 6.5 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 2 V

Qg - Gate Charge: 9.1 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 26 W

Channel Mode: Enhancement

Features

Extremely low gate and output charge

Very low on-state resistance and small package size

Reduced power consumption and increased efficiency under all load conditions

Save overall system cost by reducing the number of phases in a multi-phase conversion

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