sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IMBG65R030M1H
Data Manual:IMBG65R030M1H.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-263-7
Delivery Date:New and Original
Stock: 1000pcs
The IMBG65R030M1H CoolSiC™ MOSFET 650 VSiC MOSFET is available in a compact 7-pin SMD package and is based on advanced Infineon silicon carbide trench technology for high power applications. The device is designed to improve system performance, reduce size and increase reliability.
IMBG65R030M1H Product Specifications
FET Type: N-channel
Technology: SiCFET (Silicon Carbide)
Drain source voltage (Vdss): 650 V
Current at 25°C - continuous drain (Id): 63 A (Tc)
Drive voltage (max Rds On, min Rds On): 18V
On-resistance (max) at different Id, Vgs: 42 milliohms @ 29.5A, 18V
Vgs(th) for different Id (max): 5.7V @ 8.8mA
Gate charge (Qg) at different Vgs (max): 49 nC @ 18 V
Vgs (max): +23V, -5V
Input capacitance (Ciss) at different Vds (max): 1643 pF @ 400 V
FET function: -
Power dissipation (max): 234 W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount Type
Supplier Device Package: PG-TO263-7-12
Package/Case: TO-263-8, D²Pak (7-lead + tab), TO-263CA
Basic Part Number: IMBG65
Advantages
High performance, high reliability and ease of use
High system efficiency and high power density
Reduced system cost and complexity
Lower cost, simpler structure and smaller system size
Continuous hard commutation topology
Suitable for high temperatures and harsh operating environments
Enables bi-directional topology
Potential applications
- Telecom server SMPS
- UPS (Uninterruptible Power Supply)
- Solar PV inverters
- Electric charging infrastructure
- Energy storage and battery forming
- Class Damping Amplifiers
Model
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Package
Quantity
Describe
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CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package
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Automotive CoolSiC™ MOSFET 1200 V/116 A Q-DPAK package (HDSOP 22-3), 19 mΩ
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PG-HDSOP-22
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Automotive CoolSiC™ MOSFET 1200 V/78 A Q-DPAK package (HDSOP-22-3), 30 mΩ
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Automotive CoolSiC™ MOSFET 1200 V/61 A Q-DPAK package (HDSOP-22-3), 40 mΩ
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Automotive CoolSiC™ MOSFET 1200 V/34 A Q-DPAK package (HDSOP-22-3), 80 mΩ
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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