sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IMBF170R450M1
Data Manual:IMBF170R450M1.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-263-7
Delivery Date:New and Original
Stock: 3000pcs
The IMBF170R450M1 CoolSiC™ 1700 V, 450 mΩ SiC MOSFET features TO-263-7 for increased creepage distance and is optimized for flyback topologies for accessing auxiliary power supplies with DC bus voltages from 600 V to 1000 V in a wide range of power applications.
Characterisation
Optimised for flyback topology
Extremely low switching losses
12 V / 0 V gate source voltage compatible with flyback controllers
Fully controllable dV/dt, optimised for EMI
SMD (surface mount) package with increased creepage distance and electrical clearance (> 7 mm)
Benefits
1700 V SiC MOSFETs enable a simple and efficient single-ended flyback topology for auxiliary power supplies
SMD (surface mount) package allows for easy integration directly into the PCB, enabling natural convection cooling and eliminating the need for additional heat sinks
Reduced isolation effort due to increased creepage distance and electrical clearance of the package
Reduced system complexity
High power density
Application areas
Energy storage systems
Electric vehicle fast charging
Power supplies
Industrial motor drives and controls
Solar system solutions
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
1000
CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package
INFINEON
TO-247-4
1000
CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/116 A Q-DPAK package (HDSOP 22-3), 19 mΩ
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/78 A Q-DPAK package (HDSOP-22-3), 30 mΩ
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/61 A Q-DPAK package (HDSOP-22-3), 40 mΩ
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/44 A Q-DPAK package (HDSOP 22-3), 60 mΩ
INFINEON
PG-HDSOP-22
2000
Automotive CoolSiC™ MOSFET 1200 V/34 A Q-DPAK package (HDSOP-22-3), 80 mΩ
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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