sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT Module
Brand:INFINEON
Particular Year:24+
Package:Module
Delivery Date:New and Original
Stock: 2000pcs
FF800R12KE7E is 62 mm 1200 V, 800 A common emitter low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled diode.
Feature Of FF800R12KE7E
Highest power density
Best-in-class VCEsat
Tvj op = 175°C overload
High Creepage and Clearance Distances
Isolated base plate
Standard housing
RoHS compliant
4 kV AC 1 min Insulation
Package with CTI > 400
Benefits Of FF800R12KE7E
Existing packages with higher current capability, allows to increase inverter output power with same frame size
Highest power density
Avoidance of paralleling of IGBT modules
Reduced system costs by simplification of the inverter systems
Flexibility and ready for three-level configuration
Highest reliability
Applications Of FF800R12KE7E
Energy Storage Systems
EV charging
General purpose motor drive - variating frequency and voltage
Solid-State Circuit Breaker
Uninterruptible power supplies (UPS)
Model
Brand
Package
Quantity
Describe
ON
PIM60
1000
IGBT module grooved field-stop three-stage inverter 1050V 429A 1080W base installation
ON
PIM60
1000
IGBT module grooved field-stop three-phase inverter 1050 V 429 A 1080 W base installation
ON
PIM50
1000
IGBT module grooved field-stop three-stage inverter 1000 V 209 A 497 W base installation 50PIM
ON
PIM58
1500
IGBT module grooved field-stop three-stage inverter 1000 V 210 A 503 W base installation 58PIM
ST
SDIP-25L
2300
SLLIMM™ small low-loss intelligent molded module IPM, 3-phase inverter, 10 A, 600 V short-circuit rugged IGBT
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
SAK-TC1791F-512F240EP AB
The TC1791 is a high performance microcontroller with a TriCore CPU, program and data memory, bus, bus arbitration, interrupt controller, peripheral control processor and DMA controller and several on-chip peripherals.The TC1791 is designed to meet th…IMDQ75R025M2H
The IMDQ75R025M2H is a CoolSiC™ 750V G2 silicon carbide MOSFET from Infineon, designed for high efficiency, strong resistance to parasitic conduction of monopar gate drive, and reliability. This CoolSiC™ 750V G2 MOSFET has improved gate control, kee…IMDQ75R007M2H
IMDQ75R007M2H is a CoolSiC™ MOSFET launched by Infineon, which is the second-generation product. It adopts silicon carbide (SiC) technology. Its main specifications include:FET type: N-channelTechnology: SiCFET (Silicon carbide)Drain-source voltage (…IMDQ75R060M2H
The IMDQ75R060M2H is a CoolSiC™ MOSFET from Infineon. It is a 750V second-generation product in a Q-DPAK package with low on-resistance (60mΩ) and efficient heat dissipation design. Key parametersFET type: N-channelTechnology: SiCFET (Silicon carb…IMDQ75R004M2H
The IMDQ75R004M2H power device is a CoolSiC™ MOSFET launched by Infineon, a second-generation silicon carbide technology product, suitable for high-efficiency power electronics design. The IMDQ75R004M2H has the following key parameters:FET type: N-ch…AIMDQ75R016M2H
The AIMDQ75R016M2H is a second-generation silicon carbide MOSFET from Infineon that features improved switching performance, lower losses and enhanced thermal management. Compared with the first-generation product, the switching speed has increased by…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: