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Trade Name:MSCSM70DUM07T3AG
Data Manual:MSCSM70DUM07T3AG.pdf
Brand:Microchip
Particular Year:23+
Package:SP6C LI
Delivery Date:New and Original
Stock: 3000pcs
The MSCSM70DUM07T3AG device is a 700V/353A dual common-source silicon carbide (SiC) MOSFET power supply module.
Product properties
Technology: Silicon Carbide (SiC)
Configuration: 2 N-channel (dual) common-source
FET Function: -
Drain source voltage (Vdss): 700V
Current at 25°C - Continuous drain (Id): 353A (Tc)
On-resistance (max) at different Id, Vgs: 6.4 milliohms @ 120A, 20V
Vgs(th) at different Id (max): 2.4V @ 12mA
Gate charge (Qg) at different Vgs (max): 645nC @ 20V
Input capacitance (Ciss) at different Vds (max): 13500pF @ 700V
Power - max: 988W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Housing: Module
Supplier Device Package: SP3F
Basic Part Number: MSCSM70
Applications
The following applications are for the MSCSM70DUM07T3AG device:
- AC switches
Model
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Quantity
Describe
ROHM
Module
1000
1200V, 567A, full SiC power module with built-in half-bridge trench MOS
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PIM-36
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4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC
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1000
10 mohm SiC M3S MOSFET Module, 1200 V, 2-PACK half-bridge topology, F1 package
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PIM-18
1000
8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package
ON
PIM-18
1000
8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package
Microchip
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1000
1200V, HPD, 3 Phase Bridge + Actuation Full-Options Hybrid Power Drive mSiC™ MOSFET Module
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SiC MOSFET module N Channel 1200 V 55A (Tc) 245W (Tc) SOT-227 (ISOTOP®)
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