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Trade Name:MSCSM120HM16CT3AG
Data Manual:MSCSM120HM16CT3AG.pdf
Brand:Microchip
Particular Year:23+
Package:SP6C LI
Delivery Date:New and Original
Stock: 3000pcs
This MSCSM120HM16CT3AG device is a full bridge 1200 V/173 A full Silicon Carbide (SiC) power module.
MSCSM120HM16CT3AG device parameters:
Technology: Silicon Carbide (SiC)
Configuration: 4 N-channels
FET function: -
Drain source voltage (Vdss): 1200V (1.2kV)
Current at 25°C - Continuous drain (Id): 173A (Tc)
On-resistance (max) at different Id, Vgs: 16 milliohms @ 80A, 20V
Vgs(th) at different Id (max): 2.8V @ 2mA
Gate charge (Qg) at different Vgs (max): 464nC @ 20V
Input capacitance (Ciss) at different Vds (max): 6040pF @ 1000V
Power - max: 745W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package/Housing: Module
Supplier Device Package: SP3F
Basic part number: MSCSM120
Applications
The MSCSM120HM16CT3AG device is designed for the following applications:
• Uninterruptible power supplies
• Switched mode power supplies
• EV motor and traction drive
• Welding converters
Model
Brand
Package
Quantity
Describe
Microchip
SOT-227
1000
SiC MOSFET module N Channel 1200 V 55A (Tc) 245W (Tc) SOT-227 (ISOTOP®)
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Microchip Technology Incorporated (Nasdaq: MCHP) Microchip Semiconductor is the worlds leading supplier of microcontrollers and analog semiconductors, providing low-risk product development, lower system totals for thousands of consumer products world…
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