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Trade Name:MSCSM170AM039CT6AG
Data Manual:MSCSM170AM039CT6AG.pdf
Brand:Microchip
Particular Year:23+
Package:SP6C
Delivery Date:New and Original
Stock: 2000pcs
The MSCSM170AM039CT6AG device is a 1700 V/523 A silicon carbide (SiC) phase leg power module.
Features
The following are the main features of the MSCSM170AM039CT6AG device:
- Silicon carbide power MOSFETs
- Low RDS(on)
- High temperature performance
- SiC Schottky diode
- Zero reverse recovery
- Zero forward recovery
- Temperature-independent switching behaviour
- Positive temperature coefficient on VF
- Easy to drive Kelvin source
- Low stray inductance
- M5 power connector
- Internal thermistor for temperature monitoring
- Aluminum nitride (AlN) substrate for improved thermal performance
MSCSM170AM039CT6AG device specifications:
Technology: Silicon Carbide (SiC)
Configuration: 2 N-channel (phase angle)
FET function: -
Drain source voltage (Vdss): 1700V (1.7kV)
Current at 25°C - Continuous drain (Id): 523A (Tc)
On-resistance at different Id, Vgs (max): 5 milliohms @ 270A, 20V
Vgs(th) at different Id (max): 3.3V @ 22.5mA
Gate charge (Qg) at different Vgs (max): 1602nC @ 20V
Input capacitance (Ciss) at different Vds (max): 29700pF @ 1000V
Power - max: 2.4kW (Tc)
Operating temperature: -40°C ~ 175°C (TJ)
Mounting Type: Base Mount
Package / Enclosure: Modular
Supplier Device Package: -
Basic Part Number: MSCSM170
Model
Brand
Package
Quantity
Describe
Microchip
SOT-227
1000
SiC MOSFET module N Channel 1200 V 55A (Tc) 245W (Tc) SOT-227 (ISOTOP®)
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Microchip Technology Incorporated (Nasdaq: MCHP) Microchip Semiconductor is the worlds leading supplier of microcontrollers and analog semiconductors, providing low-risk product development, lower system totals for thousands of consumer products world…
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