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The STW65N045M9-4 is A 650 V, 39 mOhm typical, 54 A single n-channel MDmesh M9 power MOSFET in a 4-pin TO-247 package.

Instructions:

The n-channel power MOSFET is based on the innovative superjunction MDmesh M9 technology, which is suitable for medium/high voltage MOSFETs with very low on-resistance per unit area (RDS(on)). The silicon-based M9 technology uses a multi-drain manufacturing process to enhance the device structure. Among all silicon-based fast switching overjunction power MOSFETs, products manufactured using this process have lower on-resistance and reduced gate charge values, making them particularly suitable for applications requiring ultra-high power density and excellent efficiency.

Specifications of STW65N045M9-4:

FET type: N channel

Technology: MOSFET (Metal oxide)

Drain-source voltage (Vdss) : 650 V

Current at 25°C - Continuous Drain (Id) : 54A (Tc)

Drive voltage (Max Rds On, min Rds On) : 10V

On-resistance (Max.) at different ids and Vgs: 45 milliohm @ 28A, 10V

Vgs(th) (Max.) for different ids: 4.2V@ 250µA

Gate charge (Qg) at different Vgs (Max.) : 80 NC-@10 V

Vgs (Max.) : ±30V

Input capacitance (Ciss) at different Vds (Max.) : 4610 PF-@400V

FET function: -

Power dissipation (Max.) : 312W (Tc)

Operating temperature: -55°C ~ 150°C (TJ)

Installation type: Through hole

Supplier device package: TO-247-4

Package/housing: TO-247-4

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