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The NTTFSSCH1D3N04XL T10 PowerTrench® MOSFET is designed to handle high currents, which is crucial for the DC-DC power conversion stage. This 40V, 207A, single N-channel power MOSFET features a lower on-resistance, higher power density and excellent heat dissipation performance. This shielded gate trench design features an ultra-low gate charge and 1.3mΩ RDS(on). Compact 3.3mmx3.3mm lower source dual cooler second-generation package, lead-free, halogen-free, BFR-free, in compliance with RoHS directive. The NTTFSSCH1D3N04XL T10 PowerTrench MOSFET is designed to provide efficient solutions for data centers and cloud applications.

Main specifications

FET type: N-channel

Technology: MOSFET (Metal Oxide)

Drain-source voltage (Vdss) : 40 V

Current at 25°C - continuous drain (Id) : 207A (Tc)

Drive voltage (maximum Rds On, minimum Rds On) : 4.5V, 10V

On-resistance (maximum value) at different ids and Vgs: 1.3 milliohms @ 24A, 10V

Vgs(th) (maximum value) at different ids: 2.2V @ 120µA

Gate charge (Qg) at different Vgs (maximum value) : 28 nC @ 6 V

Vgs (maximum value) : ±20V

Input capacitance (Ciss) at different Vds (maximum value) : 3480 PPF @ 20 V

FET function: -

Power dissipation (maximum) : 107W (Tc)

Operating temperature: -55°C to 175°C (TJ)

Installation type: Surface mount type

Package: 9-WDFN (3.3x3.3)

Application field

The NTTFSSCH1D3N04XL is mainly used as a DC-DC converter (DC/DC) in artificial intelligence data centers, supporting high current processing in multi-stage voltage conversion schemes.

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