sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SiC MOSFET Single Tube
Brand:INFINEON
Particular Year:24+
Package:TO-263-7
Delivery Date:New and Original
Stock: 1000pcs
IMBG40R011M2H—CoolSiC™ MOSFET 400 V G2 in D2PAK-7 (TO-263-7) package, 11 mΩ
Parametrics
ID (@25°C) max: 133 A
Operating Temperature min max: -55 °C 175 °C
Package: PG-TO263-7
Polarity N
Qualification: Industrial
RDS (on) (@ Tj = 25°C) :11.3 mΩ
RthJC max: 0.35 K/W
VDS max: 400 V
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements.
Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching topologies.
Targeting power conversion in AI Server PSU, SMPS, motor control, renewables and energy storage, and Class-D amplifiers.
Model
Brand
Package
Quantity
Describe
INFINEON
TO-263-7
3000
Silicon carbide MOSFET single tube 400 V G2, 45 mΩ in D2PAK-7 (TO-263-7) package
INFINEON
PG-HSOF-8
3000
Silicon carbide MOSFET single tube 400 V G2, 45 mΩ in TOLL (PG-HSOF-8) package
INFINEON
PG-LHSOF-4
3000
Silicon carbide MOSFET single tube 650V G2 in thin TOLL 8x8 package
INFINEON
PG-LHSOF-4
3000
Silicon carbide MOSFET single tube 650V G2 in thin TOLL 8x8 package
INFINEON
PG-LHSOF-4
3000
Silicon carbide MOSFET single tube 650V G2 in thin TOLL 8x8 package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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