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Trade Name:Silicon Carbide MOSFET Single Transistor
Brand:INFINEON
Particular Year:24+
Package:HDSOP-22
Delivery Date:New and original
Stock: 3000pcs
The IMDQ75R090M1H is a highly robust 750 V G1 SiC MOSFET with optimal system performance and reliability. It offers advantages in performance, reliability and robustness, with gate drive flexibility that simplifies system design and increases efficiency and power density.
Advantages
Superior efficiency of hard switching
Supports higher switching frequencies
Higher reliability
Withstand bus voltages exceeding 500 V
Robustness against parasitic rotation
Unipolar drive
Excellent thermal performance
Potential application
Solid State Relay (SSR)
Model
Brand
Package
Quantity
Describe
INFINEON
TO-263-7
3000
Silicon carbide MOSFET single tube 400 V G2, 45 mΩ in D2PAK-7 (TO-263-7) package
INFINEON
PG-HSOF-8
3000
Silicon carbide MOSFET single tube 400 V G2, 45 mΩ in TOLL (PG-HSOF-8) package
INFINEON
PG-LHSOF-4
3000
Silicon carbide MOSFET single tube 650V G2 in thin TOLL 8x8 package
INFINEON
PG-LHSOF-4
3000
Silicon carbide MOSFET single tube 650V G2 in thin TOLL 8x8 package
INFINEON
PG-LHSOF-4
3000
Silicon carbide MOSFET single tube 650V G2 in thin TOLL 8x8 package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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