sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:AIKQ200N75CP2XKSA1
Brand:INFINEON
Particular Year:24+
Package:TO-247-3
Delivery Date:New and original
Stock: 2000pcs
Description: Automotive IGBT discrete device AIKQ200N75CP2 is an EDT2 IGBT with a co-packaged diode in a TO247PLUS package. 750V EDT technology significantly improves energy efficiency and cooling for high-voltage automotive applications by supporting battery voltages up to 470V and safe and fast switching due to increased overvoltage margins. Thus, high performance inverter system can be realized.
Device: AIKQ200N75CP2XKSA1
IGBT Type: channel
Voltage-emitter breakdown (Max) : 750 V
Current - Collector (Ic) (Max) : 200 A
Current-collector pulse (Icm) : 600 A
Vce(on) (Maximum value) for different Vge and Ic: -
Power - Max: 576 W
Switching power: 15.3mJ (on), 7mJ (off)
Input type: Standard
Grid charge: 1256 nC
Td (on/off) value at 25°C: 89ns/266ns
Test conditions: -
Operating temperature: -40°C ~ 175°C (TJ)
Installation type: Through hole
Package/housing: TO-247-3
Supplier device package: TO-247-3
Basic product number: AIKQ200
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
2000
Insulated gate bipolar transistor (IGBT) FS7 1200V 25A SCR IGBT TO247 4L
ON
TO-247-4
2000
Insulated Gate bipolar Transistor (IGBT) FS7 1200V 25A SCR IGBT STAND ALONE TO247 4L
ST
HU3PAK-7
2000
650 V, 30 A automotive-grade grooved grid field cut-off low-loss M series IGBT
INFINEON
Module
3000
HybridPACK™ Drive G2 CoolSiC™ - Compact 1200V/310A B6 Bridge Power Module
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