sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Automotive Certified IGBTs
Brand:ST
Particular Year:25+
Package:HU3PAK-7
Delivery Date:New and original
Stock: 2000pcs
The STGHU30M65DF2AG is A 650 V, 30 A automotive-grade trench gate field cut-off low-loss M series IGBT, which is developed using an advanced proprietary trench gate field cut-off structure. This device is part of the M series IGBT and represents the ideal balance between the performance and efficiency of the inverter system, where low loss and short-circuit functionality are of crucial importance. In addition, its positive temperature coefficient characteristic of VCE(sat) and the tight parameter distribution make the parallel operation safer. Its functions and technical specifications are as follows:
Function
Comply with the EC-Q101 standard
Maximum junction temperature: TJ = 175 °C
The shortest short-circuit withstand time is 6 μs
VCE(sat) = 1.6 V (typical value) @ IC = 30 A
The parameter distribution is compact.
Safe parallel connection
Low thermal resistance
Ultrafast soft-recovery reverse parallel diode
Outstanding switching performance is achieved through an additional drive kelvin pin
Technical Specification
IGBT type: Grooved field cut-off
Voltage - Emitter breakdown (maximum value) : 650 V
Current - Collector (Ic) (maximum value) : 84 A
Current-collector pulse (Icm) : 120 A
Vce(on) (maximum value) at different Vge and Ic: 2V @ 15V, 30A
Power - Maximum value: 441 W
Switching energy: 210µJ (on), 1.147mJ (off)
Input type: Standard
Gate charge: 90 nC
Td (on/off) value at 25°C: 22ns/151ns
Test conditions: 400V, 30A, 10 ohms, 15V
Reverse recovery time (trr) : 223 ns
Operating temperature: -55°C to 175°C (TJ)
Grade: Automotive grade
Qualification: AEC-Q101
Installation type: Surface mount type
Package/Shell: HU3PAK-7
The STGHU30M65DF2AG is applicable to the following various scenarios, including:
• Automobile motor control
Electronic compressor
• Industrial motor control
• Power supply and converter
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
2000
Insulated gate bipolar transistor (IGBT) FS7 1200V 25A SCR IGBT TO247 4L
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TO-247-4
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Insulated Gate bipolar Transistor (IGBT) FS7 1200V 25A SCR IGBT STAND ALONE TO247 4L
INFINEON
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HybridPACK™ Drive G2 CoolSiC™ - Compact 1200V/310A B6 Bridge Power Module
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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