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The STGHU30M65DF2AG is A 650 V, 30 A automotive-grade trench gate field cut-off low-loss M series IGBT, which is developed using an advanced proprietary trench gate field cut-off structure. This device is part of the M series IGBT and represents the ideal balance between the performance and efficiency of the inverter system, where low loss and short-circuit functionality are of crucial importance. In addition, its positive temperature coefficient characteristic of VCE(sat) and the tight parameter distribution make the parallel operation safer. Its functions and technical specifications are as follows:

Function

Comply with the EC-Q101 standard

Maximum junction temperature: TJ = 175 °C

The shortest short-circuit withstand time is 6 μs

VCE(sat) = 1.6 V (typical value) @ IC = 30 A

The parameter distribution is compact.

Safe parallel connection

Low thermal resistance

Ultrafast soft-recovery reverse parallel diode

Outstanding switching performance is achieved through an additional drive kelvin pin

Technical Specification

IGBT type: Grooved field cut-off

Voltage - Emitter breakdown (maximum value) : 650 V

Current - Collector (Ic) (maximum value) : 84 A

Current-collector pulse (Icm) : 120 A

Vce(on) (maximum value) at different Vge and Ic: 2V @ 15V, 30A

Power - Maximum value: 441 W

Switching energy: 210µJ (on), 1.147mJ (off)

Input type: Standard

Gate charge: 90 nC

Td (on/off) value at 25°C: 22ns/151ns

Test conditions: 400V, 30A, 10 ohms, 15V

Reverse recovery time (trr) : 223 ns

Operating temperature: -55°C to 175°C (TJ)

Grade: Automotive grade

Qualification: AEC-Q101

Installation type: Surface mount type

Package/Shell: HU3PAK-7

The STGHU30M65DF2AG is applicable to the following various scenarios, including:

• Automobile motor control

Electronic compressor

• Industrial motor control

• Power supply and converter

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