sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Automotive Certified IGBTs
Brand:INFINEON
Particular Year:24+
Package:PG-TO247-4
Delivery Date:New and original
Stock: 3000pcs
The AIKYX160N75CP2 is an automotive certified IGBT with 750V EDT2 technology. It comes in a 4-pin TO247PLUS package, which supports up to 470V battery voltage, safe fast switching and 30% on-off energy loss compared to 3-pin devices.
Features:
VCE = 750V
IC = 160 A
Suitable for 470 V DC systems, increasing the overvoltage margin for 400 V DC systems
Very low VCEsat (C-KE) = 1.22 V(typical value.) At 25°C, ICnom = 160 A
System Rth is reduced by up to 40% due to reflux capability and higher power output
Due to the Kelvin emitter, opening energy loss is reduced by 30% compared to 3-pin devices
Short-circuit robustness tsc = 3 s, VCE = 470 V, VGE = 15 V
Self-limiting current under short circuit conditions
Positive thermal conductivity and very tight parameter distribution for easy parallelism
Excellent current sharing performance when running in parallel
Smooth switching characteristic
Low grid charge QG
Simple gate driver design
Packaged with a fast soft recovery emitter control diode (Emcon3)
Low EMI feature
TO247PLUS package with 6.6mm higher creepage distance
High reliability and service life with proven power cycle seconds. robustness
Wide power supply pins (2 mm) for high current busbars
Resistance welding pins for direct bus connections
Lead-free plating pins and backs
Applications:
xEV traction inverter
DC-link Discharge switch
Automobile auxiliary drive
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
2000
Insulated gate bipolar transistor (IGBT) FS7 1200V 25A SCR IGBT TO247 4L
ON
TO-247-4
2000
Insulated Gate bipolar Transistor (IGBT) FS7 1200V 25A SCR IGBT STAND ALONE TO247 4L
ST
HU3PAK-7
2000
650 V, 30 A automotive-grade grooved grid field cut-off low-loss M series IGBT
INFINEON
Module
3000
HybridPACK™ Drive G2 CoolSiC™ - Compact 1200V/310A B6 Bridge Power Module
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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