sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IKW15N120H3FKSA1
Brand:INFINEON
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 5000pcs
IKW15N120H3FKSA1 High-speed 1200 V 15 A 4th generation hard-switching TRENCHSTOP™ IGBTs, co-packaged with a continuity diode in a TO247 package, offer a perfect balance between switching and conduction losses. The key feature of this series is the MOSFET-like turn-off switching behaviour with reduced turn-off losses.
Features
Designed to replace planar MOSFETs in applications with frequencies below 70kHz
Very low switching losses for improved efficiency
Excellent VCEsat behaviour through the well-known Infineon TRENCHSTOP™ technology
Fast switching behaviour with low EMI
Optimised diodes for the target application to further reduce switching losses
Option for very low gate resistance (down to 5Ω) while maintaining excellent switching behaviour
Short circuit capability
Tj(max) 175°C
Available in packages with or without a continuity diode for added design flexibility
Product Attributes
Series: TrenchStop®
Package: Tube
IGBT Type: Trench Field Cutoff
Voltage - Collector Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Current - Collector Pulse (Icm): 60 A
Vce(on) at varying Vge, Ic (max): 2.4V @ 15V, 15A
Power - Max: 217 W
Switching Energy: 1.55mJ
Input Type: Standard
Gate Charge: 75 nC
Td (On/Off) Value at 25°C: 21ns/260ns
Test Conditions: 600V, 15A, 35 ohms, 15V
Reverse Recovery Time (trr): 260 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-247-3
Supplier Device Package: PG-TO247-3-1
Model
Brand
Package
Quantity
Describe
ROHM
TO-247GE
1500
Insulated gate bipolar transistor (IGBT) 5μs Short-Circuit Tolerance, 650V 30A, FRD Built in, TO-247GE
Microchip
TO-264-3
1500
Insulated Gate Bipolar Transistor (IGBT) PT MOS 8 Combi 900 V 80 A TO-264
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 75 A TO 264
Microchip
TO-247-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
2000
Insulated Gate Bipolar Transistor (IGBT) PT MOS 7 Single 1200 V 35 A TO-247
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 1200 V 35 A TO 264 MAX
Microchip
TO-264-3
1500
Insulated gate bipolar transistor (IGBT) Fieldstop Low Frequency Combi 600 V 100 A TO 264
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247
Microchip
TO-247-3
1500
Insulated Gate Bipolar Transistor (IGBT) FG, IGBT-CombI, 600V, TO-264 MAX, RoHS
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