sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GCMX020A120B2H1P
Brand:SemiQ
Particular Year:24+
Package:Module
Delivery Date:New and original
Stock: 1000pcs
The GCMX020A120B2H1P is a highly efficient and compact MOSFET module for 1200V, 102A solar inverters and full-bridge configurations for electric vehicle charging. SemiQ's high-performance 1200V SiC modules are tested above 1400V and are designed to operate reliably in high frequency and high power environments.
specification
Technology: Silicon Carbide (SiC)
Configuration: 4 N channels (full bridge)
FET function: Silicon Carbide (SiC)
Drain-source voltage (Vdss) : 1200V
Current at 25°C - Continuous Drain (Id) : 102A (Tc)
On-resistance (Max.) at different ids and Vgs: 28 milliohm @ 50A, 20V
Vgs(th) (Max.) : 4V@20mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 222Nc-@20V
Input capacitance (Ciss) for different Vds (Max.) : 5600PF-800V
Power - Max: 333W (Tc)
Operating temperature: -40°C ~ 175°C (TJ)
Grade: -
Qualification: -
Installation type: Base installation
Package/shell: Module
Model
Brand
Package
Quantity
Describe
Microchip
SOT-227
1000
SiC MOSFET module N Channel 1200 V 55A (Tc) 245W (Tc) SOT-227 (ISOTOP®)
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A: You can inquire through the website, or by phone and email.
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A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
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