sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GCMX020A120B2H1P
Brand:SemiQ
Particular Year:24+
Package:Module
Delivery Date:New and original
Stock: 1000pcs
The GCMX020A120B2H1P is a highly efficient and compact MOSFET module for 1200V, 102A solar inverters and full-bridge configurations for electric vehicle charging. SemiQ's high-performance 1200V SiC modules are tested above 1400V and are designed to operate reliably in high frequency and high power environments.
specification
Technology: Silicon Carbide (SiC)
Configuration: 4 N channels (full bridge)
FET function: Silicon Carbide (SiC)
Drain-source voltage (Vdss) : 1200V
Current at 25°C - Continuous Drain (Id) : 102A (Tc)
On-resistance (Max.) at different ids and Vgs: 28 milliohm @ 50A, 20V
Vgs(th) (Max.) : 4V@20mA for different ids
Gate charge (Qg) at different Vgs (Max.) : 222Nc-@20V
Input capacitance (Ciss) for different Vds (Max.) : 5600PF-800V
Power - Max: 333W (Tc)
Operating temperature: -40°C ~ 175°C (TJ)
Grade: -
Qualification: -
Installation type: Base installation
Package/shell: Module
Model
Brand
Package
Quantity
Describe
ON
PIM-18
1000
10 mohm SiC M3S MOSFET Module, 1200 V, 2-PACK half-bridge topology, F1 package
ON
PIM-18
1000
8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package
ON
PIM-18
1000
8 mΩ SiC M3S MOSFET module, 1200 V, 2-PACK half-bridge topology, F1 package
Microchip
Module
1000
1200V, HPD, 3 Phase Bridge + Actuation Full-Options Hybrid Power Drive mSiC™ MOSFET Module
Microchip
SOT-227
1000
SiC MOSFET module N Channel 1200 V 55A (Tc) 245W (Tc) SOT-227 (ISOTOP®)
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
SemiQ designs, develops and manufactures Silicon Carbide (SiC) power semiconductors as well as 150mm SiC epitaxial wafers.SiC diodes and MOSFETs are available in discrete and modular as well as bare chip and wafer form.SemiQ also provides expertise in…
GCMX020B120S1-E1
SemiQ launches new QSiC 1200V SOT-227 SiC module to raise energy standards. The GCMX020B120S1-E1 1200V, 113A ultra-efficient modules support innovative designs for electric vehicles, medical power supplies and high-power solar applications.Product att…GCMX005A120S7B1
The GCMX005A120S7B1 1200V SiC MOSFET half-bridge module features low switching losses, low encrusting thermal resistance, and is extremely robust and easy to install. The module operates at 175C junction temperature and is RoHS compliant. Typical appl…GCMX010A120B3B1P
SemiQ introduces high performance QSiC power modules in a half-bridge package, the new 1200V SiC MOSFET module provides reliable and efficient operation in photovoltaic inverter, battery charger, energy storage and high voltage DC-DC converter applica…GCMX005A120B3B1P
The GCMX005A120B3B1P is a 1200V, 383A high-performance QSiC™ power module in a half-bridge package. SemiQs new 1200V SiC MOSFET module provides reliable and efficient operation in photovoltaic inverter, battery charger, energy storage and high voltag…GCMX020A120B2B1P
The GCMX020A120B2B1P is a high-performance SiC power module in a 1200V, 102A half-bridge package with two N-channels. The SiC MOSFET module provides reliable and efficient operation in photovoltaic inverter, battery charger, energy storage and high vo…GCMX010A120B2B1P
SemiQ introduces high-performance QSiC power modules in half-bridge packages, including GCMX010A120B2B1P 1200V and 214A SiC MOSFET half-bridge modules. These new 1200V SiC MOSFET modules provide reliable, efficient operation in photovoltaic inverter, …Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: