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The GCMX005A120S7B1 1200V SiC MOSFET half-bridge module features low switching losses, low encrusting thermal resistance, and is extremely robust and easy to install. The module operates at 175°C junction temperature and is RoHS compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems, and high voltage DC-DC converters.

specification

Technology: Silicon Carbide (SiC)

Configuration: 2 N channels (half bridge)

FET function: Silicon Carbide (SiC)

Drain-source voltage (Vdss) : 1200V

Current at 25°C - Continuous Drain (Id) : 348A (Tc)

On-resistance (maximum) at different ids and Vgs: 7mOhm@200A, 20V

Vgs(th) (Max.) : 4V@80mA for different ids

Gate charge (Qg) at different Vgs (Max.) : 978N@20V

Input capacitance (Ciss) for different Vds (Max.) : 29300PF-800V

Power - Max: 1.042kW (Tc)

Operating temperature: -40°C ~ 175°C (TJ)

Grade: -

Qualification: -

Installation type: Base installation

Package/shell: Module

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