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STH60N099DM9-2AG MDmesh™ M9 power MOSFETs have enhanced device architecture, low on-resistance and low gate charge values. The power MOSFET has high reverse diode dv/dt and MOSFET dv/dt tolerance, high power density and low on-off loss. The MDmesh M9 power MOSFETs also feature high switching speeds, high efficiency and low switching power losses. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

Product attribute

Product category: MOSFET

Technology: Si

Installation style: SMD/SMT

Package/Box: H2PAK-2

Transistor polarity: N-Channel

Number of channels: 1 Channel

Vds- drain-source breakdown voltage: 600 V

Id- Continuous drain current: 27 A

Rds On- drain-source on-resistance: 99 mOhms

Vgs - grid - source voltage: 30 V

Vgs TH-gate source threshold voltage: 4.5V

Qg- Grid charge: 44 nC

Minimum operating temperature: -55 °C

Maximum operating temperature: + 150°C

Pd- Power dissipation: 179 W

Channel mode: Enhanced

Package: Roll tape

Trademark: STMicroelectronics

Configuration: Single channel

Descent time: 5 ns

Product type: MOSFET

Rise time: 8 ns

Factory packaging quantity: 1000

Subcategory: MOSFETs

Transistor type: 1 N-Channel

Typical shutdown delay: 58 ns

Typical connection delay: 18 ns

Unit weight: 1.490g

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