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The SCT016H120G3AG device is a 1200 V automotive grade silicon carbide power MOSFET transistor developed from ST's advanced 3rd generation SiC MOSFET technology with high switching speeds and rugged built-in diodes for high frequency applications. In addition, the SCT016H120G3AG meets the AEC-Q101 standard and is suitable for the field of automotive electronics.

Technical parameter

Product: SCT016H120G3AG

Package/Box: H2PAK-7

Transistor polarity: N-Channel

Number of channels: 1 Channel

Vds- drain-source breakdown voltage: 1.2kV

Id- Continuous drain current: 112 A

Rds On- drain-source on-resistance: 22 mOhms

Vgs - grid - source voltage: -10 V, + 22 V

Vgs TH-gate source threshold voltage: 3 V

Qg- Grid charge: 150 nC

Minimum operating temperature: -55 C

Max. operating temperature: + 175 C

Pd- Power dissipation: 652 W

Channel mode: Enhancement

Qualification: AEC-Q101

Configuration: Single

Descent time: 23 ns

Package: Reel

Encapsulation: Cut Tape

Encapsulation: MouseReel

Product: SiC MOSFETS

Product type: SiC MOSFETS

Rise time: 22 ns

Typical shutdown delay: 126 ns

Typical connection delay: 46 ns

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