sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:STGWA30M65DF2
Data Manual:STGWA30M65DF2.pdf
Brand:ST
Particular Year:23+
Package:TO-247
Delivery Date:New original
Stock: 2000pcs
The STGWA30M65DF2 650V is an IGBT developed using an advanced proprietary grooved gate field cutoff structure. The device is part of the M-series IGBT and represents the best balance between inverter system performance and efficiency, where low loss and short circuit functions are critical. Targeted applications include home appliances, induction heating, photovoltaics, UPS, welding and lighting.
Product specification
IGBT type: trench type field cut-off
Voltage-emitter breakdown (Max) : 650 V
Current-collector (Ic) (Max.) : 60 A
Current-collector pulse (Icm) : 120 A
Vce(on) (Max.) for different Vge and Ic: 2V@15V, 30A
Power - Max. : 258 W
Switching power: 300µJ (on), 960µJ (off)
Input type: Standard
Grid charge: 80 nC
Td (On/off) at 25°C: 31.6ns/115ns
Test conditions: 400V, 30A, 10 ohms, 15V
Reverse recovery time (trr) : 140 ns
Operating temperature: -55°C ~ 175°C (TJ)
Installation type: Through hole
Package/housing: TO-247-3
Supplier device package: TO-247 long lead
Basic product number: STGWA30
Model
Brand
Package
Quantity
Describe
ST
D2PAK
5000
Trench gate field-stop 650 V, 30 A low-loss M series IGBT in a D²PAK package
IXYS
TO-220-3
5000
650V, Auroral Transmission IGBT Transistor for 20-60kHz Switching, TO-220-3
IXYS
TO-247-3
5000
900V, 165A, High Speed IGBT Transistor for 20-50 kHz Switching, TO-247-3
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