sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:STGWT40HP65FB
Data Manual:STGWT40HP65FB.pdf
Brand:ST
Particular Year:23+
Package:TO-3P
Delivery Date:New original
Stock: 2000pcs
The STGWT40HP65FB 650V device is an IGBT developed using an advanced proprietary grooved gate field cutoff structure. The device is part of the new HB family of IGBTs and represents the best compromise between conduction and switching losses to maximize the efficiency of any inverter.
Product specification
IGBT type: trench type field cut-off
Voltage-emitter breakdown (Max) : 650 V
Current - Collector (Ic) (Max) : 80 A
Current-collector pulse (Icm) : 160 A
Vce(on) (Max.) for different Vge and Ic: 2V@15V, 40A
Power - Max. : 283 W
Switching power: 363µJ (off)
Input type: Standard
Grid charge: 210 nC
Td (On/off) value at 25°C: -/142ns
Test conditions: 400V, 40A, 5 ohms, 15V
Reverse recovery time (trr) : 140 ns
Operating temperature: -55°C ~ 175°C (TJ)
Installation type: Through hole
Package/housing: TO-3P-3, SC-65-3
Supplier device package: TO-3P
Basic product number: STGWT40
Model
Brand
Package
Quantity
Describe
ST
TO-247-3
3222
IGBT trench field cut-off 650 V 80 A 283 W through hole TO-247 long lead
INFINEON
TO-247-4
1000
650V, 120A IGBT with anti-parallel diode in TO-247-4 package
INFINEON
TO-263-3
1000
IGBT Trench Field Stop 650V 62A 188W Surface Mount PG-TO263-3
INFINEON
TO-263-3
1000
IGBT Trench Field Stop 650V 55A 188W Surface Mount PG-TO263-3
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