sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCT070H120G3AG
Data Manual:SCT070H120G3AG.pdf
Brand:ST
Particular Year:23+
Package:H2PAK-7
Delivery Date:New original
Stock: 3000pcs
Device model: SCT070H120G3AG
Technology: SiCFET (silicon carbide)
Drain-source voltage (Vdss) : 1200 V
Current at 25°C - Continuous drain (Id) : 30A
Device package: H2PAK-7
This automotive grade silicon carbide power MOSFET was developed using advanced innovative third generation SiC MOSFET technology from stmicroelectronics. The device features very low RDS(on) across the entire temperature range, combined with low capacitance and very high switching operation, resulting in improved application performance in terms of frequency, energy efficiency, system size and weight reduction.
Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency
Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC)
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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