sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCT040HU65G3AG
Data Manual:SCT040HU65G3AG.pdf
Brand:ST
Particular Year:23+
Package:HU3PAK
Delivery Date:New original
Stock: 3000pcs
The SCT040HU65G3AG device is a 650V, 30A automotive grade silicon carbide power MOSFET in a HU3PAK package. The device was developed using advanced innovative third generation SiC MOSFET technology from stmicroelectronics. The device features very low RDS(on) across the entire temperature range, combined with low capacitance and very high switching operation, resulting in improved application performance in terms of frequency, energy efficiency, system size and weight reduction.
Specifications
FET type: N channel
Technology: SiCFET (silicon carbide)
Drain-source voltage (Vdss) : 650 V
Current at 25°C - Continuous Drain (Id) : 30A (Tc)
Driving voltage (maximum Rds On, minimum Rds On) : 15V, 18V
On-off resistance with different Id and Vgs (maximum) : 55 mm @ 20A, 18V
Vgs(th) (maximum value) : 4.2V@ 1mA for different ids
Grid charge (Qg) at different Vgs (Max.) : 39.5N@18V
Vgs (Max.) : +22V, -10V
Input capacitance (Ciss) for different Vds (Max.) : 920 pF @ 400 V
FET function: -
Power dissipation (maximum) : 221W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Mounting type: surface mount type
Supplier device package: HU3PAK
Package/case: TO-263-8, D²Pak (7 leads + connectors), TO-263CA
Basic product number: SCT040
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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