sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCT040H65G3AG
Data Manual:SCT040H65G3AG.pdf
Brand:ST
Particular Year:23+
Package:H2PAK-7
Delivery Date:New original
Stock: 3000pcs
The SCT040H65G3AG device is a 650V, 30A automotive grade silicon carbide power MOSFET developed using advanced innovative third generation SiC MOSFET technology from stmicroelectronics. The device features very low RDS(on) across the entire temperature range, combined with low capacitance and very high switching operation, resulting in improved application performance in terms of frequency, energy efficiency, system size and weight reduction.
Specifications
FET type: N channel
Technology: SiCFET (silicon carbide)
Drain-source voltage (Vdss) : 650 V
Current at 25°C - Continuous Drain (Id) : 30A (Tc)
Driving voltage (maximum Rds On, minimum Rds On) : 15V, 18V
On-off resistance with different Id and Vgs (maximum) : 55 mm @ 20A, 18V
Vgs(th) (maximum value) : 4.2V@ 1mA for different ids
Grid charge (Qg) at different Vgs (Max.) : 39.5N@18V
Vgs (Max.) : +18V, -5V
Input capacitance (Ciss) for different Vds (Max.) : 920 pF @ 400 V
FET function: -
Power dissipation (maximum) : 221W (Tc)
Operating temperature: -55°C ~ 175°C (TJ)
Mounting type: surface mount type
Supplier component package: H2PAK-7
Package/case: TO-263-8, D²Pak (7 leads + connectors), TO-263CA
Basic product number: SCT040
Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC)
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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The STMicroelectronics (ST) Group was established in 1987 by the merger of Italys SGS Microelectronics and Frances Thomson Semiconductor. In May 1998, SGS-THOMSON Microelectronics changed the company name to STMicroelectronics Limited. STMicroelectron…
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